The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jul. 28, 2021
Applicant:

Huawei Technologies Co., Ltd., Guangdong, CN;

Inventors:

Yue Pan, Shenzhen, CN;

Yanxiang Liu, Shenzhen, CN;

Stephane Badel, Leuven, BE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01);
Abstract

A memory and an electronic device are provided. The memory includes a storage element (), a first transistor (), a second transistor (), a first bit line (BLA), and a second bit line (BLB). The storage element () is coupled to the first bit line (BLA) and the second bit line (BLB) by separately using the first transistor () and the second transistor (), and the first transistor () and the second transistor () are turned on during a write operation. When the foregoing solution is used, compared with providing a required write current by using one transistor, providing the write current by using the two transistors may enable a smaller transistor to meet a requirement, thereby reducing an area required by the entire memory. In addition, the memory in this application can still support a dual-port feature in a read operation.


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