The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Nov. 19, 2020
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Shin Imamura, Tokyo, JP;

Toshiaki Kusunoki, Tokyo, JP;

Eri Takahashi, Tokyo, JP;

Yoshifumi Sekiguchi, Tokyo, JP;

Takayuki Kanda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); H01J 49/02 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2018 (2013.01); H01J 49/025 (2013.01);
Abstract

Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (), a GaN layer () that is provided on the incident side to the sapphire substrate () and includes GaN, a quantum well structure () provided on the incident side to the GaN layer (), and a conductive layer () provided on the incident side to the quantum well structure (), wherein a plurality of emitting layers () including InGaN and a plurality of barrier layers () including GaN are alternatively stacked in the quantum well structure (), and an oxygen-containing layer () including oxygen is provided between the quantum well structure () and the conductive layer ().


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