The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Mar. 08, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Hideaki Majima, Minato Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2623 (2013.01); G01R 31/2621 (2013.01); G01R 31/2884 (2013.01); H03K 17/687 (2013.01); H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a deterioration checking apparatus includes an inductor that is connected in series to a main current path of a MOS transistor to be checked, and forms a closed loop together with the MOS transistor when the MOS transistor is in an ON-state, a control circuit that controls ON/OFF of the MOS transistor, a current sensor that detects a current released from the inductor, and a calculation circuit that calculates an ON-resistance of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an ON-state, and calculates a threshold voltage of the MOS transistor from an attenuation characteristic of a current released from the inductor when the MOS transistor is in an OFF-state. Therefore, it is possible to easily check a deterioration state of the MOS transistor.


Find Patent Forward Citations

Loading…