The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Aug. 17, 2021
Applicants:
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Osaka University, Suita, JP;
Inventors:
Naruto Miyakawa, Nagaokakyo, JP;
Ayumi Shinagawa, Nagaokakyo, JP;
Shota Ushiba, Nagaokakyo, JP;
Masahiko Kimura, Nagaokakyo, JP;
Kazuhiko Matsumoto, Suita, JP;
Takao Ono, Suita, JP;
Assignees:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G01N 27/414 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); H01L 29/1606 (2013.01);
Abstract
A graphene transistor includes a graphene layer including at least one sheet of graphene, a drain electrode and a source electrode each electrically connected to the graphene layer, a charge donor on at least one main surface of the graphene layer, the charge donor including an impurity charge, and a counter ion having a charge with a sign different from a sign of the impurity charge.