The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jan. 28, 2021
Applicant:

Agc Inc., Tokyo, JP;

Inventors:

Hirofumi Tokunaga, Tokyo, JP;

Daisuke Kobayashi, Tokyo, JP;

Kazutaka Ono, Tokyo, JP;

Atsuyoshi Takenaka, Tokyo, JP;

Yoshitaka Maeyanagi, Tokyo, JP;

Assignee:

AGC Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 21/00 (2006.01); C03C 3/087 (2006.01); C03C 3/091 (2006.01); C03C 17/00 (2006.01); C03C 19/00 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
C03C 21/008 (2013.01); C03C 3/087 (2013.01); C03C 3/091 (2013.01); C03C 17/009 (2013.01); C03C 19/00 (2013.01); G02F 1/133512 (2013.01); C03C 2203/10 (2013.01);
Abstract

The present invention relates to a glass substrate including a pair of main surfaces and an end surface, and having a surface layer diffusion Sn atom concentration of 2.0×10atomic/cmor more and 1.4×10atomic/cmor less in at least one of the main surfaces, the surface layer diffusion Sn atom concentration being obtained by subtracting an Sn atom concentration of an inside of the glass substrate from an Sn atom concentration of a surface layer of the glass substrate, in which the Sn atom concentration of a surface layer of the glass substrate is defined as an Sn atom concentration at a depth of 0.1 to 0.3 μm from the main surface and the Sn atom concentration of an inside of the glass substrate is defined as an Sn atom concentration at a depth of 9.0 to 9.2 μm from the main surface.


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