The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12069959 B1

Date of Patent:

Aug. 20, 2024

Filed:

Mar. 11, 2021

Magnetic memory device and manufacturing method of magnetic memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Kuniaki Sugiura, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Nilufa Rahim

Int. Cl.

CPC ...

H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);

U.S. Cl.

CPC ...

H10N 50/10 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);

Abstract

According to one embodiment, a magnetic memory device includes a first magnetoresistance effect element provided above a substrate, a first switching element member, and a first conductor. Each of the first switching element member and the first conductor is provided above the first magnetoresistance effect element. The first switching element member includes a first portion in contact with a lower surface of the first conductor directly above the first magnetoresistance effect element. An area of a lower surface of the first switching element member is smaller than a cross-sectional area of the first switching element member along the lower surface of the first conductor.

Find Patent Forward Citations