The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jul. 28, 2022
Applicant:
Universal Display Corporation, Ewing, NJ (US);
Inventors:
Hsiao-Fan Chen, Lawrence Township, NJ (US);
Tongxiang (Aaron) Lu, Lawrenceville, NJ (US);
Nicholas J. Thompson, New Hope, PA (US);
Eric A. Margulies, Philadelphia, PA (US);
George Fitzgerald, Lambertville, PA (US);
Jerald Feldman, Cherry Hill, NJ (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/60 (2023.01); C07D 209/86 (2006.01); C07D 265/38 (2006.01); C07D 401/04 (2006.01); C07D 401/10 (2006.01); C07D 401/14 (2006.01); C07D 403/04 (2006.01); C07D 413/04 (2006.01); C07D 487/04 (2006.01); C09K 11/06 (2006.01); H10K 50/11 (2023.01); H10K 101/10 (2023.01);
U.S. Cl.
CPC ...
H10K 85/6572 (2023.02); C07D 209/86 (2013.01); C07D 265/38 (2013.01); C07D 401/04 (2013.01); C07D 401/10 (2013.01); C07D 401/14 (2013.01); C07D 403/04 (2013.01); C07D 413/04 (2013.01); C07D 487/04 (2013.01); C09K 11/06 (2013.01); H10K 85/615 (2023.02); H10K 85/622 (2023.02); H10K 85/623 (2023.02); H10K 85/624 (2023.02); H10K 85/626 (2023.02); H10K 85/631 (2023.02); H10K 85/633 (2023.02); H10K 85/636 (2023.02); H10K 85/654 (2023.02); H10K 85/657 (2023.02); H10K 85/6576 (2023.02); C09K 2211/1018 (2013.01); H10K 50/11 (2023.02); H10K 2101/10 (2023.02);
Abstract
Compounds that are organic radicals that can have a dual function. The compounds can be fluorescent emitters that emit in the near-IR. The compounds can also facilitate reverse intersystem crossing (RISC) to convert triplet excitons in an OLED to singlet excited states to maximize utilization of generated excitons in the OLED and approach 100% internal quantum efficiency.