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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12069877 B1

PDFFull Text
Date of Patent:
Aug. 20, 2024

Filed:

Aug. 23, 2021

Composition for manufacturing light-emitting device, light-emitting device manufactured by the same, and method of manufacturing the light-emitting device

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Heunggyu Kim, Yongin-si, KR;

Sehun Kim, Yongin-si, KR;

Taeheon Kang, Yongin-si, KR;

Hyeran Mun, Yongin-si, KR;

Juyon Lee, Yongin-si, KR;

Jaekook Ha, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Lewis Roca Rothgerber Christie LLP

Primary Examiner:

Evan G Clinton

Int. Cl.
CPC ...
H10K 85/60 (2023.01); H10K 50/11 (2023.01); H10K 50/16 (2023.01); H10K 71/00 (2023.01); H10K 71/12 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 50/11 (2023.02); H10K 85/626 (2023.02); H10K 85/631 (2023.02); H10K 85/636 (2023.02); H10K 85/6576 (2023.02); H10K 50/16 (2023.02); H10K 71/00 (2023.02); H10K 71/12 (2023.02); H10K 85/6574 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02);
Abstract

A composition for manufacturing a light-emitting device includes: a solvent; and a first compound and a second compound, each dispersed in the solvent; wherein a molecular weight of the first compound is 750 g/mol or less, a molecular weight of the second compound is greater than 750 g/mol, a lowest unoccupied molecular orbital (LUMO) energy level of the second compound is greater than −2.4 eV, a highest occupied molecular orbital (HOMO) energy level of the second compound is less than −5.6 eV, and a bandgap energy of the second compound is greater than 3.2 eV.

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