The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Feb. 16, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Yoo Hyun Noh, Icheon-si, KR;

Da Yung Byun, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H01L 23/522 (2006.01); H10B 41/20 (2023.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02); H01L 23/5226 (2013.01); H10B 41/20 (2023.02); H10B 41/40 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a stacked structure including a first region in which conductive layers and the insulating layers are stacked alternately with each other, and a second region in which sacrificial layers and the insulating layers are stacked alternately with each other, a first slit structure located at a boundary between the first region and the second region and including a first through portion passing through the stacked structure and first protrusions extending from a sidewall of the first through portion, a second slit structure located at the boundary and including a second through portion passing through the stacked structure and second protrusions extending from a sidewall of the second through portion and coupled to the first protrusions, a circuit located under the stacked structure, and a contact plug passing through the second region of the stacked structure and electrically connected to the circuit.


Find Patent Forward Citations

Noh, Yoo. (2024). Semiconductor device and manufacturing method of semiconductor device (U.S. Patent No. 12069860). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12069860

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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