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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12069849 B1

PDFFull Text
Date of Patent:
Aug. 20, 2024

Filed:

Mar. 21, 2023

Semiconductor devices and methods of forming semiconductor devices

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Daeik Kim, Hwaseong-si, KR;

Bong-Soo Kim, Yongin-si, KR;

Jemin Park, Suwon-si, KR;

Taejin Park, Yongin-si, KR;

Yoosang Hwang, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

David Vu

Assistant Examiner:

Brandon C Fox

Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 21/3213 (2013.01); H01L 21/76829 (2013.01); H01L 21/76838 (2013.01); H01L 21/823468 (2013.01); H01L 29/6656 (2013.01); H10B 12/033 (2023.02); H10B 12/053 (2023.02); H10B 12/31 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

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