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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12068734 B1

PDFFull Text
Date of Patent:
Aug. 20, 2024

Filed:

Feb. 19, 2019

Method for forming an aluminum nitride layer

Applicant:

Rf360 Singapore Pte. Ltd., Singapore, SG;

Inventors:

Maximilian Schiek, Puchheim, DE;

Christian Ceranski, Munich, DE;

Günter Scheinbacher, Baldham, DE;

Assignee:

RF360 Singapore Pte. Ltd., Singapore, SG;

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Jeffrey T Carley

Int. Cl.
CPC ...
H03H 3/04 (2006.01); H03H 9/02 (2006.01); H03H 9/08 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H10N 30/079 (2023.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 3/04 (2013.01); H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/08 (2013.01); H03H 9/13 (2013.01); H03H 9/175 (2013.01); H03H 9/176 (2013.01); H10N 30/079 (2023.02); H03H 2003/025 (2013.01); H03H 2003/0407 (2013.01);
Abstract

A method for forming an aluminum nitride layer () comprises the provision of a substrate () and the forming of a patterned metal nitride layer (). A bottom electrode metal layer () is formed on the exposed portions () of the substrate. An aluminum nitride layer portion () grown above the exposed portion () of the substrate () exhibits piezoelectric properties. An aluminum nitride layer portion () grown above the patterned metal nitride layer () exhibits no piezoelectric properties (). Both aluminum nitride layer portions () are grown simultaneously.

Find Patent Forward Citations

Schiek, Maximilian. (2024). Method for forming an aluminum nitride layer (U.S. Patent No. 12068734). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12068734

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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