The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Sep. 07, 2022
Analog Devices International Unlimited Company, Limerick, IE;
Srivatsan Parthasarathy, Acton, MA (US);
Javier A. Salcedo, North Billerica, MA (US);
Miguel Chanca, Valencia, ES;
Analog Devices International Unlimited Company, Limerick, IE;
Abstract
Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile