The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Jun. 05, 2020
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Shinya Kawakita, Tokyo, JP;

Shiro Yamashita, Hitachinaka, JP;

Toshikazu Shigyo, Hitachinaka, JP;

Assignee:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01R 12/58 (2011.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01);
U.S. Cl.
CPC ...
H01R 12/585 (2013.01); H05K 1/0271 (2013.01); H05K 1/116 (2013.01); H05K 2201/10189 (2013.01); H05K 2201/10303 (2013.01); H05K 2201/1059 (2013.01);
Abstract

A circuit board including a through-hole into which a press-fit terminal portion is inserted in a depth direction; an inner wall land provided on an inner wall of the through-hole; and a plurality of inner layer lands which are provided in an inner layer of the circuit board, are planes substantially parallel to a mounting surface of the circuit board, and are in contact with the inner wall land. The inner wall land has a first region that is in contact with the press-fit terminal portion and a second region that is not in contact with the press-fit terminal portion. Among the plurality of inner layer lands, a first inner layer land, which is an inner layer land disposed on an identical surface with the first region of the inner wall land, is wider than a second inner layer land which is an inner layer land disposed on an identical surface with the second region of the inner wall land.


Find Patent Forward Citations

Loading…