The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Sep. 27, 2022
Applicant:

Graphenix Development, Inc., Williamsville, NY (US);

Inventors:

John C. Brewer, Rochester, NY (US);

Paul D. Garman, Pittsford, NY (US);

Bernard Philip Gridley, Rochester, NY (US);

Robert G. Anstey, Tonawanda, NY (US);

Kevin Tanzil, Rochester, NY (US);

Assignee:

Graphenix Development, Inc., Williamsville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/02 (2006.01); H01M 4/13 (2010.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/13 (2013.01); H01M 4/38 (2013.01); H01M 4/62 (2013.01); H01M 4/664 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01);
Abstract

A method of making an anode for an energy storage device such as a lithium-ion energy storage device is disclosed. The method may include depositing a first lithium storage layer over a current collector by a first CVD process. The current collector may include a metal oxide layer, and the first lithium storage layer is deposited onto the metal oxide layer. The method may also include forming a first intermediate layer over at least a portion of the first lithium storage layer. The method may further include depositing a second lithium storage layer over the first intermediate layer by a second CVD process. At least the first lithium storage layer may be a continuous porous lithium storage layer having a total content of silicon, germanium, or a combination thereof, of at least 40 atomic %.


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