The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Dec. 17, 2020
Applicant:
The Boeing Company, Chicago, IL (US);
Inventors:
Richard R. King, Thousand Oaks, CA (US);
Christopher M. Fetzer, Valencia, CA (US);
Nasser H. Karam, La Canada, CA (US);
Assignee:
THE BOEING COMPANY, Arlington, VA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/074 (2012.01); H01L 31/0687 (2012.01); H01L 31/0725 (2012.01); H01L 31/0735 (2012.01); H01L 31/0745 (2012.01); H01L 31/078 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/074 (2013.01); H01L 31/0687 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H01L 31/0745 (2013.01); H01L 31/078 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01); Y02E 10/544 (2013.01);
Abstract
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.