The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Dec. 29, 2020
Applicant:
Tcl China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventor:
Xiaobo Hu, Shenzhen, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/41733 (2013.01); H01L 29/66742 (2013.01);
Abstract
A thin film transistor and a manufacturing method thereof are provided. The thin film transistor includes a composite electrode including a barrier layer and an electrode layer. The barrier layer has a protruding part relative to the electrode layer, an orthographic projection of the protruding part on the composite electrode protrudes beyond an orthographic projection of the electrode layer on the composite electrode, and a length of the protruding part ranges from 0.3 um to 0.5 um. The thin film transistor and the manufacturing method thereof of the present disclosure can relieve light leakage, thereby improving a contrast ratio of products.