The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Mar. 26, 2018
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Toshiharu Marui, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Keisuke Takemoto, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT S. A. S., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.