The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jul. 28, 2021
Epistar Corporation, Hsinchu, TW;
Ya-Yu Yang, Hsinchu, TW;
Shang-Ju Tu, Hsinchu, TW;
Tsung-Cheng Chang, Hsinchu, TW;
Chia-Cheng Liu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0<x1≤1, 0≤x2≤1, 0≤x3≤1, 0≤x4<1, and x1≠x2; and wherein the first functional layer includes a first thickness, the second functional layer includes a second thickness, and the second thickness is greater than the first thickness.