The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Nov. 19, 2020
Applicant:

Unist(ulsan National Institute of Science and Technology), Ulsan, KR;

Inventors:

Kyung Rok Kim, Ulsan, KR;

Ji Won Chang, Ulsan, KR;

Jae Won Jeong, Ulsan, KR;

Youngeun Choi, Ulsan, KR;

Wooseok Kim, Ulsan, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H03K 19/0948 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H03K 19/0948 (2013.01);
Abstract

A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.


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