Reverse conducting insulated gate power semiconductor device having low conduction losses

Abstract

A reverse conducting insulated gate power semiconductor device is provided which comprises a plurality of active unit cells () and a pilot diode unit cell () comprising a second conductivity type anode region () in direct contact with a first main electrode () and extending from a first main side () to a first depth (d). Each active unit cell () comprises a first conductivity type first source layer () in direct contact with the first main electrode (), a second conductivity type base layer () and a first gate electrode (), which is separated from the first source layer () and the second conductivity type base layer () by a first gate insulating layer () to form a first field effect transistor structure. A lateral size (w) of the anode region () in an orthogonal projection onto a vertical plane perpendicular to the first main side () is equal to or less than 1 μm. On a first lateral side surface of the anode region () a first insulating layer () is arranged and on an opposing second lateral side surface of the anode region () a second insulating layer () is arranged. And a distance between the first insulating layer () and the second insulating layer () is equal to or less than 1 μm, the first insulating layer () extending vertically from the first main side () to a second depth (d), and the second insulating layer () extending vertically from the first main side () to a third depth (d), wherein the first depth (d) is less than the second depth (d) and less than the third depth (d).