The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Jan. 10, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Andreas Plößl, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01); H01L 27/15 (2006.01); H01L 25/16 (2023.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 25/18 (2013.01); H01L 27/156 (2013.01); H01L 23/5384 (2013.01); H01L 25/167 (2013.01); H01L 33/62 (2013.01);
Abstract

In an embodiment a component includes a semiconductor chip, a connection member and a carrier, wherein the semiconductor chip is mechanically and electrically connected to the carrier via the connection member, wherein the connection member includes a contiguous metallic connecting layer and a plurality of metallic through-vias extending vertically through the connecting layer and being laterally spaced from the connecting layer by insulating regions, wherein the insulating regions are filled with a gaseous medium and are hermetically sealed, and wherein the gaseous medium contains an insulating gas having a higher breakdown field strength compared to nitrogen, or wherein a gas pressure is less than 1 mbar in the hermetically sealed insulating regions.


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