The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Dec. 23, 2021
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Jarrod N. Vaillancourt, South Hampton, NH (US);
William J. Davis, Hollis, NH (US);
Assignee:
Raytheon Technologies Corporation, Tewksbury, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3114 (2013.01); H01L 23/49861 (2013.01);
Abstract
An interconnect layer for an integrated circuit device includes a low radio frequency (RF) loss primary coating that forms a main portion of the interconnect layer, an opening formed in the primary coating, a high aspect ratio patternable secondary coating within the opening, and a via formed in the secondary coating. An aspect ratio of the via is greater than an aspect ratio of the opening.