The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 29, 2021
Huawei Technologies Co., Ltd., Shenzhen, CN;
Sunhom Steve Paak, Shenzhen, CN;
Xiaolong Ma, Shanghai, CN;
Yanxiang Liu, Shenzhen, CN;
Daxiang Wang, Shenzhen, CN;
Zanfeng Chen, Shenzhen, CN;
Yu Xia, Shenzhen, CN;
Huabin Chen, Shanghai, CN;
Yongjie Zhou, Shenzhen, CN;
Huawei Technologies Co., Ltd., Shenzhen, CN;
Abstract
This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.