The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Jan. 30, 2023
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Wenyu Chen, San Jose, CA (US);

Shohei Kawasaki, Sunnyvale, CA (US);

Tetsuya Roppongi, San Jose, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/235 (2006.01); G11B 5/11 (2006.01); G11B 5/127 (2006.01); G11B 5/31 (2006.01); G11B 5/00 (2006.01); G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3146 (2013.01); G11B 5/11 (2013.01); G11B 5/1278 (2013.01); G11B 5/235 (2013.01); G11B 5/3133 (2013.01); G11B 5/314 (2013.01); G11B 5/3163 (2013.01); G11B 2005/0024 (2013.01); G11B 5/3912 (2013.01); G11B 5/3919 (2013.01); G11B 2005/3996 (2013.01);
Abstract

A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.


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