The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

May. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyoung Jun Roh, Hwaseong-si, KR;

Jae Woo Park, Yongin-si, KR;

Jun Han Choi, Suwon-si, KR;

Myoung Bo Kwak, Seoul, KR;

Jung Hwan Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/56 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
G05F 1/56 (2013.01); G11C 5/147 (2013.01); G11C 7/10 (2013.01); H03F 3/45071 (2013.01);
Abstract

A semiconductor device including an error amplifier configured to receive a voltage of an output node and a reference voltage, a flipped voltage follower (FVF) circuit configured to receive an output of the error amplifier and maintain the voltage of the output node at the reference voltage, and a bias current control circuit configured to receive first to third mode signals, control a magnitude of a bias current flowing through the FVF circuit based on the first to third mode signals, control the bias current of a first magnitude, based on the first mode signal, control the bias current of a second magnitude smaller than the first magnitude, based on the second mode signal, and control the bias current of a third magnitude smaller than the second magnitude, based on the third mode signal.


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