Method of manufacturing semiconductor element, semiconductor element, and substrate

Abstract

A method of manufacturing a semiconductor element according to the present disclosure includes a mask forming step of defining, on a first surface of a substrate, a front surface region not covered by a first deposition inhibiting mask as a first crystal growth region, an element forming step of forming a semiconductor layer over the first crystal growth region, a mask removing step of removing the mask, and an element separating step of separating the semiconductor layer. After the element separating step, a substrate reusing process is performed one or more times, the substrate reusing process including a mask reforming step of forming a second deposition inhibiting mask in a region differing from a formation position of the first deposition inhibiting mask to expose a second crystal growth region not covered by the mask, an element reforming step of forming a semiconductor layer to serve as an element on the second crystal growth region, a mask removing step of removing the deposition inhibiting mask, and an element separating step of separating the semiconductor layer from the substrate.