The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Mar. 07, 2022
Applicant:
Jx Metals Corporation, Tokyo, JP;
Inventors:
Shunsuke Oka, Kitaibaraki, JP;
Kenji Suzuki, Kitaibaraki, JP;
Assignee:
JX METALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); C30B 33/10 (2013.01); H01L 21/02021 (2013.01); H01L 21/304 (2013.01); H01L 29/20 (2013.01);
Abstract
An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xfrom the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width Xfrom the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or more to 700 μm or less.