The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

May. 19, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Satoshi Nagashima, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/10 (2023.01); A61B 90/00 (2016.01); A61B 90/25 (2016.01); G03B 17/56 (2021.01); H04N 23/54 (2023.01); H04N 23/695 (2023.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01); A61B 90/50 (2016.01);
U.S. Cl.
CPC ...
A61B 90/361 (2016.02); A61B 90/25 (2016.02); G03B 17/561 (2013.01); H04N 23/54 (2023.01); H04N 23/695 (2023.01); H10B 41/10 (2023.02); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02); A61B 2090/506 (2016.02);
Abstract

A memory device includes a first and second conductor respectively included in a first and second layer stack stacked in a first direction and separated from each other; a first and second portion of a semiconductor extending in the first direction between the first and the second layer stack, and separated from each other in same layer; a first film between the first conductor and the first portion; a second film between the second conductor and the second portion; a first insulator between the first conductor and the first film; a second insulator between the second conductor and the second film; a third insulator between the first insulator and the first film; and a fourth insulator between the second insulator and the second film. The third and fourth insulator have a higher dielectric constant than the first and second insulator.


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