The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Aug. 11, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seyun Kim, Seoul, KR;
Doyoon Kim, Hwaseong-si, KR;
Yumin Kim, Seoul, KR;
Jinhong Kim, Seoul, KR;
Soichiro Mizusaki, Suwon-si, KR;
Youngjin Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A variable resistance memory device includes a variable resistance layer and a first conductive element and a second conductive element which are spaced apart from each other on the variable resistance layer. The variable resistance layer may include a first layer and a second layer on the first layer. The first layer includes a ternary or more metal oxide containing two or more metal materials having different valences. The second layer may include silicon oxide. The variable resistance memory device may have a wide range of resistance variation due to the metal oxide in which oxygen vacancies are easily formed. The first conductive element and the second conductive element, in response to an applied voltage, may be configured to form a current path in a direction perpendicular to a direction in which the first layer and the second direction are stacked.