The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Aug. 04, 2021
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jun Liu, Beijing, CN;

Jingang Fang, Beijing, CN;

Yang Zhang, Beijing, CN;

Tongshang Su, Beijing, CN;

Wei He, Beijing, CN;

Bin Zhou, Beijing, CN;

Ning Liu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/844 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 59/17 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 50/844 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 59/17 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02);
Abstract

A light-emitting substrate includes; a base, an isolation portion disposed on the base and located in an isolation region located outside a light-emitting region, and a second insulating pattern located in the light-emitting region. The isolation portion includes a first conductive pattern, a second conductive pattern and a first insulating pattern that are sequentially stacked on the base; an orthogonal projection of the first conductive pattern on the base is located within an orthogonal projection of the second conductive pattern on the base; and a side face of the first conductive pattern proximate to the light-emitting region and a corresponding side face of the second conductive pattern proximate to the light-emitting region have a first gap therebetween. A side face of the second insulating pattern proximate to the first insulating pattern and a side face of the first insulating pattern proximate to the second insulating pattern have a second gap therebetween.


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