The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Apr. 01, 2021
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Tomona Yamaguchi, Tokyo, JP;
Takayuki Sumida, Kanagawa, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 39/32 (2023.01); H10K 85/10 (2023.01); H10K 30/10 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H10K 85/111 (2023.02); H10K 30/10 (2023.02); H10K 85/615 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02);
Abstract
A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° ° C. or higher, and the following Equation (1) is met: μh≥1.0×10(cm/Vs) . . . (1), where μhdenotes hole mobility of the first interfacial layer.