The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Dec. 06, 2021
SK Hynix Inc., Icheon-si, KR;
Jae Hyun Han, Icheon-si, KR;
SK HYNIX INC., Icheon-si, KR;
Abstract
A semiconductor device includes a substrate, a first bit line disposed on the substrate, a first tunnel insulation layer disposed on the first bit line, a variable resistance structure disposed on the first tunnel insulation layer and having a pillar structure, a second tunnel insulation layer disposed on an upper surface of the variable resistance structure, a second bit line disposed on the second tunnel insulation layer, a barrier insulation layer disposed on a sidewall surface of the variable resistance structure, and a word line disposed on the barrier insulation layer. A dielectric constant of the barrier insulation layer is greater than a dielectric constant of each of the first and second tunnel insulation layers.