The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
May. 31, 2021
Applicant:
Southern University of Sciene and Technology, ShenZhen, CN;
Inventor:
Guobiao Zhang, Corvallis, OR (US);
Assignee:
Southern University of Science and Technology, GuangDong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/84 (2023.02); H10B 63/20 (2023.02); H10N 70/841 (2023.02); H10N 70/063 (2023.02);
Abstract
High-density three-dimensional (3-D) vertical memory (3D-M) includes lightly-doped-segment (LDS) 3D-Mand non-circular-hole (NCH) 3D-M. The preferred LDS 3D-Mtakes advantage of longitudinal space, instead of lateral space, to guarantee normal write operation. On the other hand, the lateral cross-section of the memory hole of the preferred NCH 3D-Mincludes at least two intersecting pairs of parallel sides, with each pair formed through a single DUV exposure and having a minimum spacing <50 nm.