The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jan. 25, 2022
Board of Regents of the University of Nebraska, Lincoln, NE (US);
Board of Regents, the University of Texas System, Austin, TX (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
The Trustees of Indiana University, Bloomington, IN (US);
The Regents of the University of California, Oakland, CA (US);
Peter A. Dowben, Crete, NE (US);
Ruihua Cheng, Indianapolis, IN (US);
Xiaoshan Xu, Lincoln, NE (US);
Alpha T. N'Diaye, Berkeley, CA (US);
Aaron Mosey, Indianapolis, IN (US);
Guanhua Hao, Lincoln, NE (US);
Thilini K. Ekanayaka, Lincoln, NE (US);
Xuanyuan Jiang, Gainesville, FL (US);
Andrew J. Yost, Stillwater, OK (US);
Andrew Marshall, Dallas, TX (US);
Azad J. Naeemi, Atlanta, GA (US);
NUTECH VENTURES, Lincoln, NE (US);
GEORGIA TECH RESEARCH CORPORATION, Atlanta, GA (US);
THE TRUSTEES OF INDIANA UNIVERSITY, Bloomington, IN (US);
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10A/cm), a device on/off ratio >10, thin film quality, the ability to 'lock' the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.