The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

May. 03, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jivaan Kishore Jhothiraman, Meridian, ID (US);

Kunal Shrotri, Boise, ID (US);

Matthew J. King, Boise, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 21/768 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 21/76801 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/50 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A microelectronic device comprises a stack structure comprising a stack structure comprising alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures, staircase structures within the stack structure and having steps comprising edges of the tiers, and a doped dielectric material adjacent the steps of the staircase structures and comprising silicon dioxide doped with one or more of boron, phosphorus, carbon, and fluorine, the doped dielectric material having a greater ratio of Si—O—Si bonds to water than borophosphosilicate glass. Related methods of forming a microelectronic device and related electronic systems are also disclosed.


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