The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Feb. 15, 2022
Nanya Technology Corporation, New Taipei, TW;
Tseng-Fu Lu, New Taipei, TW;
Chuan-Lin Hsiao, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A memory structure includes a substrate, a first word line and a first word line. The substrate has a plurality of active areas and an isolation structure surrounding the active areas. The first word line trench is formed across a first active area of the active areas and the isolation structure. The first word line trench includes a first slot and a first groove. The first slot is recessed from a top surface of the substrate. The first groove expands from a bottom of the first slot. A first sidewall is connected between the bottom of the first slot and a top of the first groove. A first word line is formed in the first word line trench. The first word line comprises a gate dielectric confomally formed on the first groove and the first slot.