The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
May. 27, 2020
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Fan Li, Beijing, CN;
Jiangbo Chen, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/20 (2006.01); A61B 5/263 (2021.01); A61N 1/04 (2006.01); H05K 1/03 (2006.01); H05K 1/09 (2006.01); H05K 1/11 (2006.01); H05K 3/00 (2006.01);
U.S. Cl.
CPC ...
H05K 3/20 (2013.01); H05K 1/09 (2013.01); H05K 1/118 (2013.01); H05K 3/0058 (2013.01); A61B 5/263 (2021.01); A61B 2562/125 (2013.01); A61N 1/04 (2013.01); H05K 1/0346 (2013.01); H05K 3/002 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/0323 (2013.01); H05K 2201/0367 (2013.01); H05K 2203/0147 (2013.01);
Abstract
The present application provides a method for manufacturing a microelectrode film. The method includes: forming at least one recess on the carrier substrate by isotropic etching; forming a microelectrode seed pattern in the recess; growing a microelectrode in the recess by using the microelectrode seed pattern; making a first substrate to be in contact with a side of the carrier substrate having the recess thereon; separating the microelectrode from the carrier substrate to transfer the microelectrode onto the first substrate.