The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Jan. 18, 2022
Applicant:

Excellence Opto. Inc., Miaoli County, TW;

Inventors:

Fu-Bang Chen, Miaoli County, TW;

Kuo-Hsin Huang, Miaoli County, TW;

Assignee:

EXCELLENCE OPTO. INC., Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/0016 (2013.01); H01L 33/04 (2013.01); H01L 33/10 (2013.01);
Abstract

The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.


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