The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Nov. 07, 2023
Trina Solar Co., Ltd., Jiangsu, CN;
Trina Solar (Suqian) Photoelectric Co., Ltd., Jiangsu, CN;
Chengfa Liu, Jiangsu, CN;
Xiaopeng Wu, Jiangsu, CN;
Yaqian Zhang, Jiangsu, CN;
Yang Zou, Jiangsu, CN;
Yugang Lu, Jiangsu, CN;
Shuai Zhang, Jiangsu, CN;
Hong Chen, Jiangsu, CN;
Daming Chen, Jiangsu, CN;
Yifeng Chen, Jiangsu, CN;
TRINA SOLAR CO., LTD., Jiangsu, CN;
TRINA SOLAR (SUQIAN) PHOTOELECTRIC CO., LTD., Jiangsu, CN;
Abstract
A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.