The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Feb. 26, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Dong Li, Beijing, CN;

Shantao Chen, Beijing, CN;

Huijuan Zhang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/4908 (2013.01); H01L 29/78645 (2013.01);
Abstract

The present disclosure provides a thin film transistor, a display panel and a display device. The thin film transistor includes a semiconductor material layer, a first insulating layer and a gate layer. The semiconductor material layer is at a side of a base substrate, and includes a first channel portion, a first doped portion and a second channel portion sequentially connected. The first insulating layer is at a side of the semiconductor material layer facing away from the base substrate. The gate layer is at a side of the first insulating layer facing away from the semiconductor material layer, and includes a first gate portion and a second gate portion. An orthographic projection of the first gate portion on the base substrate coincides with an orthographic projection of the first channel portion on the base substrate, and the first gate portion is configured to receive a gate driving signal.


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