The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Oct. 06, 2023
Ancora Semiconductors Inc., Taoyuan, TW;
Ancora Semiconductors Inc., Taoyuan, TW;
Abstract
A semiconductor device includes an active layer having first and second active regions, first and second source electrodes, first and second drain electrodes, first and second gate electrodes, a first source metal layer, first and second drain metal layers, and a source pad electrically connected to the first source metal layer. The second drain metal layer is electrically connected to the second drain electrode and the first source metal layer. A projection of the second drain metal layer on the active layer forms a drain metal layer region. An projection of the source pad on the active layer forms a source pad region. An area of an overlapping region between the source pad region and the drain metal layer region is smaller than or equal to 40% of an area of the drain metal layer region.