The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Mar. 24, 2022
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventor:
Ferdinando Iucolano, Gravina di Catania, IT;
Assignee:
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/7838 (2013.01);
Abstract
An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode.