The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Sep. 30, 2021
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jun Liu, Beijing, CN;

Luke Ding, Beijing, CN;

Jingang Fang, Beijing, CN;

Bin Zhou, Beijing, CN;

Leilei Cheng, Beijing, CN;

Wei Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/44 (2006.01); H01L 21/475 (2006.01); H01L 21/4757 (2006.01); H01L 21/4763 (2006.01); H01L 27/12 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/0274 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/44 (2013.01); H01L 21/475 (2013.01); H01L 21/47573 (2013.01); H01L 21/47635 (2013.01); H01L 27/1288 (2013.01); H01L 29/401 (2013.01); H01L 29/7869 (2013.01); H01L 29/41733 (2013.01); H01L 29/78633 (2013.01);
Abstract

A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.


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