The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Aug. 10, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Soyoung Lee, Yongin-si, KR;

Jieun Lee, Yongin-si, KR;

Minhee Choi, Yongin-si, KR;

Sungho Kim, Yongin-si, KR;

Jongryuk Park, Yongin-si, KR;

Seokje Seong, Yongin-si, KR;

Seungwoo Sung, Yongin-si, KR;

Ilgoo Youn, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09G 3/3258 (2016.01); H01L 23/552 (2006.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); G09G 3/3233 (2016.01); G09G 3/3266 (2016.01); H10K 59/80 (2023.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G09G 3/3258 (2013.01); H01L 23/552 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H10K 59/1213 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 2300/0819 (2013.01); G09G 2320/0257 (2013.01); G09G 2330/021 (2013.01); H10K 59/8792 (2023.02);
Abstract

A display panel includes a first thin-film transistor ('TFT') arranged in a display area of a substrate and including a first semiconductor layer including a silicon semiconductor, a second TFT connected to the first TFT and including a second semiconductor layer including an oxide semiconductor, a voltage line connected to the first TFT, and a shield layer arranged between the substrate and the first semiconductor layer, and including a pattern and a connection line, the pattern overlapping the first semiconductor layer, the connection line extending from the pattern, and a voltage that is a same as a voltage applied to the voltage line being applied to the shield layer.


Find Patent Forward Citations

Loading…