The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Dec. 10, 2021
Richtek Technology Corporation, Zhubei, TW;
Kun-Huang Yu, Hsinchu, TW;
Chien-Yu Chen, Kaohsiung, TW;
Ting-Wei Liao, Taichung, TW;
Chih-Wen Hsiung, Hsinchu, TW;
Chun-Lung Chang, Yilan, TW;
Kuo-Chin Chiu, Hsinchu, TW;
Wu-Te Weng, Hsinchu, TW;
Chien-Wei Chiu, Yunlin, TW;
Yong-Zhong Hu, Hsinchu, TW;
Ta-Yung Yang, Taoyuan, TW;
RICHTEK TECHNOLOGY CORPORATION, Zhubei, TW;
Abstract
A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.