The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Apr. 19, 2022
Applicant:

Mosaic Microsystems Llc, Rochester, NY (US);

Inventors:

Shelby Forrester Nelson, Pittsford, NY (US);

David Howard Levy, Rochester, NY (US);

Assignee:

MOSAIC MICROSYSTEMS LLC, Rochester, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02013 (2013.01); H01L 21/6836 (2013.01);
Abstract

Processed inorganic wafers and processing a wafer stack including an abrasive process are disclosed. A wafer stack may be formed at least by performing a temporary bonding process to temporarily bond at least a first inorganic wafer to a first surface of a handle wafer. The handle wafer may include at least one inorganic wafer, and the temporary bonding process may include formation of an adhesion layer between the first inorganic wafer and the first surface of the handle wafer. The adhesion layer may include a vacuum deposited carbonaceous film with a thickness between 1 nm and 100 nm, inclusive. An abrasive process may be applied to at least part of the wafer stack, and the abrasive process may reduce a thickness of the first inorganic wafer of the wafer stack. The first inorganic wafer may be debonded from the handle wafer after applying the abrasive process.


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