The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Nov. 19, 2021
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Shin Tamura, Tokyo, JP;

Shinji Kawashima, Tokyo, JP;

Hisao Kobashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 1/20 (2006.01); G01K 1/16 (2006.01); G01K 7/01 (2006.01); H01L 21/66 (2006.01); H03M 1/12 (2006.01);
U.S. Cl.
CPC ...
G01K 1/20 (2013.01); G01K 1/16 (2013.01); G01K 7/01 (2013.01); H01L 22/30 (2013.01); H01L 22/12 (2013.01); H01L 22/34 (2013.01); H03M 1/12 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate on which a temperature sensor is formed, a plurality of insulating films formed above the semiconductor substrate, a temperature measurement wiring pattern formed on a first insulating film which is one of the plurality of the insulating films, a detection electrode which is formed on the uppermost insulating film of the plurality of the insulating films to be arranged at a position corresponding to the first temperature measurement wiring pattern and is provided for contact a temperature measurement needle, and one or more via electrodes formed in one or more insulating film between the temperature measurement electrode and the detection electrode to couple between the temperature measurement electrode and the detection electrode.


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