The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Jan. 27, 2022
Applicant:

Nanjing University of Aeronautics and Astronautics, Nanjing, CN;

Inventors:

Xiguang Gao, Nanjing, CN;

Yingdong Song, Nanjing, CN;

Guoqiang Yu, Nanjing, CN;

Sheng Zhang, Nanjing, CN;

Xiaoting Shi, Nanjing, CN;

Zheng Ni, Nanjing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/38 (2006.01); C03C 10/00 (2006.01); C04B 35/52 (2006.01); C04B 35/80 (2006.01);
U.S. Cl.
CPC ...
C04B 35/52 (2013.01); C03C 10/0036 (2013.01); C04B 35/80 (2013.01); G01N 33/388 (2013.01); C03C 2214/20 (2013.01);
Abstract

A method is provided for calculating gaseous diffusion and oxidation evolution of a ceramic matrix composite (CMC) structure, which includes determining temperature and load distribution in a structural member; determining matrix crack distribution in the structure; establishing an equivalent diffusion coefficient model of a fiber bundle scale to predict a gas flow channel in a fiber bundle: averaging a total amount of gaseous diffusion in the channel to establish the equivalent diffusion coefficient model of the fiber bundle composite scale related to the matrix crack distribution; establishing a representative volume element (RVE) model; establishing an equivalent diffusion coefficient model of a RVE scale; calculating the distribution of the gas concentration and oxidation products in the structure; calculating a growth thickness of an oxide at cracks and pores in each element; and updating sealing conditions of the gas channel, and calculating a new equivalent diffusion coefficient field and the distribution of the oxidation products again.


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