The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Jul. 21, 2022
Applicant:

Nanjing Shengxi Xinying Technology Co., Ltd, Nanjing, CN;

Inventors:

Hui Li, San Jose, CA (US);

Feng Yin, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/00301 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); B81B 2201/0271 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81C 2203/0785 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1461 (2013.01);
Abstract

The present invention discloses an SOC PMUT suitable for high-density system integration, an array chip and a manufacturing method thereof. With the SOC PMUT suitable for high-density system integration, vertical stacking and monolithic integration of a SOC PMUT array with CMOS auxiliary circuits is realized by means of direct bonding of active wafers and a vertical multi-channel metal wiring structure; in addition, the extension to the package layer is implemented by means of TSVs, without any bonding mini-pad on the periphery of the array for communication with the CMOS. Thus, the bottleneck of metal interconnections in conventional ultrasonic transducers is overcome, the chip area occupied by metal interconnections in ultrasonic transducers is greatly reduced, the metal wiring length is reduced, thus the resulting adverse effects of an electrical parasitic effect on the performance of the ultrasonic transducer array are reduced.


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