The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Nov. 18, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Suyeon Yun, Yongin-si, KR;

Minsoo Kim, Yongin-si, KR;

Yoona Kim, Yongin-si, KR;

Seongmin Wang, Yongin-si, KR;

Anna Ryu, Yongin-si, KR;

Jeehyun Lee, Yongin-si, KR;

Heesoon Jeong, Yongin-si, KR;

Byunghee Choi, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/65 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10K 59/121 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); H10K 59/65 (2023.02); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01);
Abstract

An embodiment of a display device includes: a first display area; a second display area including a transmission area; a third display area between the first display area and the second display area; and a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively. Each of the plurality of pixel circuits includes: a first thin-film transistor including a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer; a second thin-film transistor including a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer; and a bottom shielding layer below the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane.


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